? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 1400 v v cgr t j = 25c to 150c, r ge = 1m 1400 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 28 a i f110 t c = 110c 15 a i cm t c = 25c, 1ms 150 a i a t c = 25 c28a e as t c = 25 c 360 mj ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 120 a (rbsoa) clamped inductive load @ v ces < v ce p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque (ixgh & ixgk) 1.13/10 nm/lb.in. f c mounting force (ixgx) 20..120/4.5..27 n/lb. weight to-247 & plus247 6 g to-264 10 g ds99736a(11/10) genx3 tm 1400v igbts w/ diode ixgh28n140b3h1 ixgx28n140b3h1 IXGK28N140B3H1 v ces = 1400v i c110 = 28a v ce(sat) 3.60v avalanche rated symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a note 2, t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 3.00 3.60 v t j = 125c 3.05 to-247 (ixgh) g = gate e = emitter c = collector tab = collector g c e tab to-264 (ixgk) e g c tab plus247 (ixgx) g c e tab features z optimized for low conduction and switching losses z square rbsoa z avalanche rated z anti-parallel ultra fast diode z high current handling capability advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines
ixys reserves the right to change limits, test conditions, and dimensions. ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 12 19 s c ies 1830 pf c oes v ce = 25v, v ge = 0v, f = 1 mhz 163 pf c res 46 pf q g(on) 88 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 12 nc q gc 38 nc t d(on) 16 ns t ri 36 ns e on 3.6 mj t d(off) 190 400 ns t fi 360 ns e off 3.9 6.5 j t d(on) 16 ns t ri 50 ns e on 7.3 mj t d(off) 215 ns t fi 700 ns e off 6.5 mj r thjc 0.42 c/w r thcs 0.21 c/w 0.15 c/w inductive load, t j = 25c i c = i c110 , v ge = 15v v ce = 960v, r g = 5 note 3 inductive load, t j = 125c i c = i c110 , v ge = 15v v ce = 960v, r g = 5 note 3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 20a, v ge = 0v, note 1 3.0 v t j = 150c 2.65 v t rr 350 ns i rm 18.5 a r thjc 0.90 c/w i f = 20a, v ge = 0v, -di f /dt = -200a/ s, v r = 1200v, t j = 125c notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp ices measurement. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2010 ixys corporation, all rights reserved e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - collector 3 - emitter plus247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 to-264 aa outline terminals: 1 = gate 2,4 = collector 3 = emitter back side dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1
ixys reserves the right to change limits, test conditions, and dimensions. ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 00.511.522.533.544.55 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 v ce - volts i c - amperes v ge = 15v 7v 11v 9v 13v 5v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 00.511.522.533.544.555.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 56a i c = 28a i c = 14a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 56a 28a 14a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 34567891011 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
? 2010 ixys corporation, all rights reserved fig. 7. transconductance 0 4 8 12 16 20 24 28 0 20406080100120 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 600v i c = 28a i g = 10ma fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 200 400 600 800 1000 1200 1400 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1
ixys reserves the right to change limits, test conditions, and dimensions. ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1 fig. 12. inductive switching energy loss vs. gate resistance 2 4 6 8 10 12 14 16 18 0 10203040506070 r g - ohms e off - millijoules 3 5 7 9 11 13 15 17 19 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 960v i c = 28a i c = 56a i c = 14a fig. 15. inductive turn-off switching times vs. gate resistance 550 600 650 700 750 800 0 10203040506070 r g - ohms t f i - nanoseconds 0 200 400 600 800 1000 t d ( off ) - nanoseconds t fi t d(off) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 56a i c = 28a fig. 13. inductive swiching energy loss vs. collector current 0 2 4 6 8 10 12 14 10 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0 2 4 6 8 10 12 14 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 960v i c = 28a i c = 56a i c = 14a fig. 16. inductive turn-off switching times vs. collector current 0 200 400 600 800 1000 1200 10 15 20 25 30 35 40 45 50 55 60 i c - amperes t f i - nanoseconds 50 100 150 200 250 300 350 t d ( off ) - nanoseconds t fi t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 200 300 400 500 600 700 800 900 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 100 130 160 190 220 250 280 310 t d ( off ) - nanoseconds t fi t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 960v i c = 28a i c = 56a
? 2010 ixys corporation, all rights reserved fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 0 10203040506070 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 120 140 t d ( on ) - nanoseconds t ri t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 56a i c = 28a fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 10 15 20 25 30 35 40 45 50 55 60 i c - amperes t r i - nanoseconds 4 8 12 16 20 24 28 32 36 t d ( on ) - nanoseconds t ri t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 180 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 8 12 16 20 24 28 32 36 40 t d ( on ) - nanoseconds t ri t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 960v i c = 28a i c = 56a ixys ref: g_28n140b3h1(4a)11-29-10-b ixgh28n140b3h1 IXGK28N140B3H1 ixgx28n140b3h1
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